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Proceedings Paper

Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 um
Author(s): Boris A. Matveev; Nonna V. Zotova; Sergey A. Karandashev; Maxim A. Remennyi; Nikolai M. Stus'; Georgii N. Talalakin
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Paper Abstract

We describe Gd doped backside illuminated In(Ga)As double and single heterostructure photodiodes with InAsSbP cladding layers grown onto heavily doped n+-InAs transparent substrate of the episide-down bonding design. The advantages of the construction include improvement of material quality due to rare earth gettering effect and the possibility of coupling with fibers or immersion lenses through the contact free surface. The report presents U-I, spectral response and sensitivity of narrow band (3.1-3.4 micrometers ) photodiodes at 20divided by180 degree(s)C with RoA product as high as 2 (Omega) cm2 at room temperature and serial resistance as low as 0.1 (Omega) .

Paper Details

Date Published: 21 May 2002
PDF: 6 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467661
Show Author Affiliations
Boris A. Matveev, A.F. Ioffe Physico-Technical Institute (Russia)
Nonna V. Zotova, A.F. Ioffe Physico-Technical Institute (Russia)
Sergey A. Karandashev, A.F. Ioffe Physico-Technical Institute (Russia)
Maxim A. Remennyi, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai M. Stus', A.F. Ioffe Physico-Technical Institute (Russia)
Georgii N. Talalakin, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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