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Proceedings Paper

Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector
Author(s): Na Li; Teik Kooi Ong; Yuen Chuen Chan; Chang-Qing Xu; X. H. Tang
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Paper Abstract

In this paper, we report our research work on the application of the pulsed-laser-induced disordering (P-LID) technique in InGaAs/InGaAsP MQW waveguide photodetector. A Q-switched Nd-YAG laser with wavelength of 1.064 micrometers was used to irradiate on the InGaAs/InGaAsP quantum well materials, annealing process at 625 degree(s)C for 120s was followed. A maximum bandgap shift of up to 112meV has been observed. The variety of photocurrent curves indicated that the cut-off wavelength of the photodetector becomes shorter with increasing of intermixing strength.

Paper Details

Date Published: 21 May 2002
PDF: 6 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467660
Show Author Affiliations
Na Li, Nanyang Technological Univ. (Singapore)
Teik Kooi Ong, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Chang-Qing Xu, Nanyang Technological Univ. (Singapore)
X. H. Tang, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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