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Proceedings Paper

Preliminary study of 65-nm-node alternating phase-shift mask fabrication
Author(s): Kouji Hosono; Naoyuki Ishiwata; Satoru Asai; Hiroshi Maruyama; Yutaka Miyahara; Syuichi Sanki; Youhei Yamashita; Yuichiro Hotta; Tomohiko Furukawa; Minoru Naitou; Hiroyuki Miyashita; Shigeru Noguchi
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Paper Abstract

This paper presents about 65 nm-node alternating phase shift mask (APSM) fabrication. One of issue in fabrication of 65 nm-node APSM is second layer patterning process. As chromium (Cr) pattern CD becomes narrow, tighter edge placement accuracy of second layer resist pattern is required. Therefore higher total overlay accuracy is required in second layer patterning process. To solve this issue, we examined application of 50kV electron beam (EB) vector writing system and chemically amplified resist (CAR) process. Error factors which affect total overlay accuracy were quantified experimentally, and minimum required resist coverage through the shifter etching process was determined. From these results, it was confirmed a second layer patterning process using 50kV EB vector writing system and CAR process had enough performance for 65 nm-node APSM fabrication.

Paper Details

Date Published: 27 December 2002
PDF: 8 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467487
Show Author Affiliations
Kouji Hosono, Fujitsu Ltd. (Japan)
Naoyuki Ishiwata, Fujitsu Ltd. (Japan)
Satoru Asai, Fujitsu Ltd. (Japan)
Hiroshi Maruyama, Fujitsu Ltd. (Japan)
Yutaka Miyahara, Fujitsu Ltd. (Japan)
Syuichi Sanki, Dai Nippon Printing Co., Ltd. (Japan)
Youhei Yamashita, Dai Nippon Printing Co., Ltd. (Japan)
Yuichiro Hotta, Dai Nippon Printing Co., Ltd. (Japan)
Tomohiko Furukawa, Dai Nippon Printing Co., Ltd. (Japan)
Minoru Naitou, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Miyashita, Dai Nippon Printing Co., Ltd. (Japan)
Shigeru Noguchi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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