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Proceedings Paper

Electrical dimension characterization of binary and alternating aperture phase-shifting masks
Author(s): Martin McCallum; Stewart Smith; Alan Lissimore; Anthony J. Walton; J. Tom M. Stevenson
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Paper Abstract

This paper presents the use of specially designed electrically testable structures to measure and characterise linewidths on both binary and alternating aperture phase-shifting masks (altPSM). The technique behind the use of these modified cross-bridge structures is explained together with the specific designs used to characterise both dense and isolated features. The practicality of measuring masks with and without anti-reflective chromium dioxide are discussed and the the difference in the repeatability of the measurements is presented. CD SEM measurements of these features are compared with those obtained electrically and an excellent correlation between the electrical dimension (ECD) and the dimension measured both on mask and wafer by SEM is shown.

Paper Details

Date Published: 27 December 2002
PDF: 10 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467430
Show Author Affiliations
Martin McCallum, Nikon Precision Europe GmbH (United Kingdom)
Stewart Smith, Univ. of Edinburgh (United Kingdom)
Alan Lissimore, Nikon Precision Europe GmbH (United Kingdom)
Anthony J. Walton, Univ. of Edinburgh (United Kingdom)
J. Tom M. Stevenson, Univ. of Edinburgh (United Kingdom)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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