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Proceedings Paper

Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors
Author(s): Dao Hua Zhang; Lu Sun; Wei Shi; Soon Fatt Yoon; Ning Li; Z. Yuan; Junhao Chu
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Paper Abstract

Strained p-type In0.15Ga0.85As/Al0.33Ga0.67As quantum well infrared photodetectors (QWIPs) with different Be concentrations in their wells, which detect normal infrared incidence, were investigated. The QWIPs with a Be doping density of 1018 cm-3 in the wells show a cut-off wavelength of 7.9 μm and basically symmetric detectives of about 8 x 108 cm.Hz½/W at 600 Hz. By increasing the Be doping density in the wells to 2 x 1019 cm-3, the cut-off wavelength is blue-shifted to about 7.25 meV and the photoresponsivity and detectivity become asymmetric. The detectivity is increased to about 1.4 x 109 cm.Hz½/W at positive biases but significantly reduced at negative biases. The blue shift in the cut-off wavelength for the QWIP devices with heavy doping concentration in the wells is mainly due to the bandgap shrinkage and the increased well width while the asymmetric behavior in the photoresponsivity and detectivity is likely due to the inhomogenity resulting from dopant diffusion at high doping.

Paper Details

Date Published: 20 September 2002
PDF: 7 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.465825
Show Author Affiliations
Dao Hua Zhang, Nanyang Technological Univ. (Singapore)
Lu Sun, Nanyang Technological Univ. (Singapore)
Wei Shi, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Ning Li, Shanghai Institute of Technical Physics (China)
Z. Yuan, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)

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