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Proceedings Paper

Progress in the study of development-free vapor photolithography
Author(s): Xiaoyin Hong; Dan Liu; Zhong-Zhe Li; Ji-Quang Xiao; Gui-Rong Dong
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Paper Abstract

Development-free vapor photolithography (DFVP) is a unique all-dry pattern transfer technique and has been successfully used in manufacturing microelectronic devices. It can simultaneously overcome the diffraction limitation and the problems arisen from wet process. In DFVP the etching reaction of SiO2 with gaseous HF occurs at the buried SiO2/polymer film interface. Contrary to the conventional lithography, the photopolymer used in DFVP does not act as a resist but an accelerator. In this paper a proposed mechanism of the etching reaction and explanations of very high resolution, high aspect ratio and the requirement of high exposure dose in DFVP will be presented. In addition, this paper will report the investigation of parameters as the functions of etching rate.

Paper Details

Date Published: 1 June 1991
PDF: 12 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46403
Show Author Affiliations
Xiaoyin Hong, Tsinghua Univ. (China)
Dan Liu, Tsinghua Univ. (China)
Zhong-Zhe Li, Tsinghua Univ. (China)
Ji-Quang Xiao, Beijing Institute of Chemical Technology (China)
Gui-Rong Dong, Beijing Institute of Chemical Technology (China)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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