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Proceedings Paper

Evaluation of phenolic resists for 193 nm surface imaging
Author(s): Mark A. Hartney; Donald W. Johnson; Allen C. Spencer
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Paper Abstract

A variety of novolac-based polymers and blends with photoactive compounds were studied for their suitability as resists in a 193-nm positive-tone silylation process. The addition of photoactive compound was found to reduce the sensitivity of the resist and to hinder the diffusion of the silylating agent. Pure meta-cresol novolacs and polyvinylphenols, both of which can be polymerized to high (> 10,000) molecular weights show the best sensitivity for this process. Diffusion rates correlate with the molar volume of the silylating agent, although the activation energy does not. Resolution of 0.2-micrometers line-and-space gratings has been achieved with the polyvinylphenol and meta-cresol novolac resins.

Paper Details

Date Published: 1 June 1991
PDF: 10 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46375
Show Author Affiliations
Mark A. Hartney, Lincoln Lab./MIT (United States)
Donald W. Johnson, Microlithography Consulting Co., Inc. (United States)
Allen C. Spencer, MacDermid Inc. (United States)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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