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Proceedings Paper

Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists
Author(s): Antoni S. Gozdz; Hiroshi Ono; Seiki Ito; John A. Shelburne III; Minoru Matsuda
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Paper Abstract

Soluble 1:1 alternating copolymers of p-trimethylsilylstyrene (1) and p- pentamethyldisilylstyrene (2) with sulfur dioxide have been synthesized by free-radical copolymerization at T < -50 degree(s)C. Both copolymers had very high molecular weights and exhibited good film-forming properties. Their thermal stability in nitrogen (5% wt loss) was ca. 210-230 degree(s)C. The etch rate under O2 RIE conditions (15 mTorr O2, -400 V) was 3.4 and 2.5 nm/min, and their electron beam sensitivity was 3 and 6 (mu) C/cm2 at 20 and 50 kV, respectively, using a 40/60 v/v toluene/2-propanol solution as the developer. 200-nm- pitch gratings for advanced optoelectronic devices were fabricated in various planarizing materials and InP using poly(1 sulfone) (P1S) as a top imaging layer.

Paper Details

Date Published: 1 June 1991
PDF: 6 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46370
Show Author Affiliations
Antoni S. Gozdz, Bell Communications Research (United States)
Hiroshi Ono, Chisso Corp. (Japan)
Seiki Ito, Chisso Corp. (Japan)
John A. Shelburne III, Bell Communications Research (United States)
Minoru Matsuda, Tohuku Univ. (Japan)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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