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Proceedings Paper

Novolak resin design concept for high-resolution positive resists
Author(s): Tsutomu Noguchi; Hidemi Tomita
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Paper Abstract

A new novolak-type photoresist which is applicable to excimer laser lithography has been developed. This resist consists of a naphthoquinonediazide-4-sulfonyl ester(NQD-4) and branched novolak resins, which are synthesized in an excess formalin/m-cresol molar ratio (1approximately equals 2) condition. The branched novolak resin-NQD-4 pendent resist (BNP resist) has about two times higher sensitivity than a conventional novolak resist (PR-1024MB) and exhibits clearly a surface development induction, which affords higher (gamma) -values. Copolymerization of hydroquinone (HQ) improves the sensitivity, resist profile, and mask linearity of the BNP resist. The BNP-HQ resist has a resolution capability of 0.35 micrometers lines and spaces with a KrF excimer laser sensitivity of about 170 mJ/cm2. Therefore, our design concept of novolak resin is applicable to high resolution positive resists and especially to excimer resists.

Paper Details

Date Published: 1 June 1991
PDF: 12 pages
Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); doi: 10.1117/12.46366
Show Author Affiliations
Tsutomu Noguchi, Sony Corp. Research Ctr. (Japan)
Hidemi Tomita, Sony Corp. Research Ctr. (Japan)

Published in SPIE Proceedings Vol. 1466:
Advances in Resist Technology and Processing VIII
Hiroshi Ito, Editor(s)

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