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Proceedings Paper

UV laser micromachining of silicon, indium phosphide, and lithium niobate for telecommunications applications
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Paper Abstract

The laser micromachining characteristics of indium phosphide, lithium niobate and silicon have been characterised using a 355nm neodymium vanadate laser and 193nm and 248nm excimer lasers. Etch rates for these materials are presented at the different laser wavelengths. High quality cutting of the three materials is demonstrated with the 355nm laser and an excimer laser mask projection method is subsequently used to micromachine precision V-grooves as fibre placement structures. Silicon microbenches, used for the integration of multiple-function devices, are also produced using the 355nm laser.

Paper Details

Date Published: 27 August 2003
PDF: 8 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.463653
Show Author Affiliations
Jako Greuters, Exitech Ltd. (United Kingdom)
Nadeem Hasan Rizvi, Exitech Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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