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Proceedings Paper

Analytical models of CMOS APS
Author(s): Victor A. Shilin; Pavel A. Skrylev; A. L. Stempkovsky
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Paper Abstract

The comparison of the CMOS APS and CCD device features has been made. It is expedient to develop high resolution and wide dynamic range systems with the PhCCD and simple systems with CMOS APS, which allows developing camera-on-a-chip. Schematic and layout types of CMOS APS pixel: with 3, 4 transistors per pixel, and with 5 transistors per two pixels have been considered. Pixel mathematical models, which binds photoelectric characteristics and design parameters. Dependencies of main features: reset time, read-out time, output signal amplitude, signal-to-noise ratio, modulation transfer function (MFT), which allows correctly designing the CMOS APS for any purpose applications, have been calculated.

Paper Details

Date Published: 30 April 2002
PDF: 12 pages
Proc. SPIE 4761, Second Conference on Photonics for Transportation, (30 April 2002); doi: 10.1117/12.463473
Show Author Affiliations
Victor A. Shilin, Institute of Design Problems in Microelectronics (Russia)
Pavel A. Skrylev, Institute of Design Problems in Microelectronics (Russia)
A. L. Stempkovsky, Institute of Design Problems in Microelectronics (Russia)

Published in SPIE Proceedings Vol. 4761:
Second Conference on Photonics for Transportation
Vladimir G. Inozemtsev; Victor A. Shilin, Editor(s)

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