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Proceedings Paper

Optical interferometry investigation of internal stress and optomechanical characteristics of silicon-oxynitride thin films fabricated by PECVD
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Paper Abstract

The full-field interferometry is very well suited for evaluation of micromechanical and material properties of microsystems. In this paper, we presented a Twyman-Green interferometer for MEMS/MOEMS testing. The measurements of out-of-plan displacements of special silicon membranes with thin film of SiOxNy deposited by PECVD enable the analysis of opto=mechanical properties.

Paper Details

Date Published: 19 April 2002
PDF: 5 pages
Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462881
Show Author Affiliations
Michal Jozwik, Univ. de Franche-Compte (France)
Andrei Sabac, Univ. de Franche-Comte (France)
Christophe Gorecki, Univ. de Franche-Comte (France)

Published in SPIE Proceedings Vol. 4755:
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002
Bernard Courtois; Jean Michel Karam; Karen W. Markus; Bernd Michel; Tamal Mukherjee; James A. Walker, Editor(s)

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