Share Email Print

Proceedings Paper

Reduction of spurious resonance in rf package using silicon micromachining
Author(s): Wonseo Choi; Joonyeop Lee; Seongsu Moon; Seonho Seok; KukJin Chun
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A low-loss RF package has been realized using silicon- micromachining technique. As the frequency of the device increases, the loss caused by packaging increases. Therefore, low loss high frequency packaging is needed. For frequency above 10GHz, a metal package is used but a metal package has spurious resonance caused by interaction between radiation of RF circuits and cavity geometry. To suppress spurious resonance, microwave absorbers are deposited inside the metal package; it is very hard to process with these materials in microscale. In this work, high resistivity silicon is simulated as a high frequency packaging material, and is realized using silicon deep etching process. And metal-filled thorough-hole via is formed to provide surface mount type interconnection using sandblast and copper electroplating process. The silicon package has reflection loss of 15dB, insertion loss of 0.7db from 500MHz up to 40GHz region.

Paper Details

Date Published: 19 April 2002
PDF: 7 pages
Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); doi: 10.1117/12.462872
Show Author Affiliations
Wonseo Choi, Seoul National Univ. (South Korea)
Joonyeop Lee, Seoul National Univ. (South Korea)
Seongsu Moon, Seoul National Univ. (South Korea)
Seonho Seok, Seoul National Univ. (South Korea)
KukJin Chun, Seoul National Univ. (South Korea)

Published in SPIE Proceedings Vol. 4755:
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002
Bernard Courtois; Jean Michel Karam; Karen W. Markus; Bernd Michel; Tamal Mukherjee; James A. Walker, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?