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Proceedings Paper

Excimer-laser-induced photochemical polishing of SiC mirror
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Paper Abstract

SiC surface was polished accurately with KrF laser irradiation in the presence of the HF and H2O2 mixed solutions. The SiC is very hard; moreover, the material is resistant to chemicals. Then we tried to polish the softened SiC chemically on the soft mat. The SiC surface was pressurized at 50 g/cm2 on the fluorocarbon polishing mat. Next the HF and H2O2 mixed solutions are infiltrated into the thin gap between the sample and the fluorocarbon, and KrF laser irradiated through the fluorocarbon turntable. By this irradiation, the SiC surface was oxidized and produced SiO2 and CO2. Then CO2 is diffused in an atmosphere, and only SiO2 solidified on the sample surface. The moment the SiO2 was formed, it dissolves in HF solution. After the etching, the polishing progresses by the friction with the fluorocarbon. The surface roughness was obtained 80 nm with 60 minute polishing with KrF laser irradiation (400 mJ/cm2, 20 pps) in 15% HF/H2O2 ambience.

Paper Details

Date Published: 9 April 2002
PDF: 6 pages
Proc. SPIE 4679, Laser-Induced Damage in Optical Materials: 2001, (9 April 2002); doi: 10.1117/12.461691
Show Author Affiliations
Masataka M. Murahara, Tokai Univ. (Japan)

Published in SPIE Proceedings Vol. 4679:
Laser-Induced Damage in Optical Materials: 2001
Gregory J. Exarhos; Arthur H. Guenther; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz, Editor(s)

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