Share Email Print

Proceedings Paper

Impurity-free vacancy disordering of InGaAs quantum dots
Author(s): Penelope Lever; Hark Hoe Tan; Michael Gal; Chennupati Jagadish
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The effect of interdiffusion on the luminescence of InGaAs quantum dots grown by metal organic chemical vapor deposition with various In compositions was studied. The samples were subjected to thermal annealing with and without spin-on-glass. Up to 250 meV blueshifts and narrowing of the linewidths by up to 60 meV were observed in samples that were annealed without the dielectric cap. The effects of diffusion were seen at lower annealing temperatures for the samples with higher In content. The spin-on-glass created additional blueshift above that of simple thermal annealing. However, Ga-doped spin-on-glass suppressed significantly any additional intermixing other than that of simple thermal annealing. Strain is also a factor in the blueshift and narrowing of the photoluminescence. These results suggest that a range of bandgap energies could be achieved by selective area interdiffusion of the quantum dot samples.

Paper Details

Date Published: 28 March 2002
PDF: 6 pages
Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); doi: 10.1117/12.460800
Show Author Affiliations
Penelope Lever, Australian National Univ. (Australia)
Hark Hoe Tan, Australian National Univ. (Australia)
Michael Gal, Univ. of New South Wales (Australia)
Chennupati Jagadish, Australian National Univ. (Australia)

Published in SPIE Proceedings Vol. 4656:
Quantum Dot Devices and Computing
James A. Lott; Nikolai N. Ledentsov; Kevin J. Malloy; Bruce E. Kane; Thomas W. Sigmon, Editor(s)

© SPIE. Terms of Use
Back to Top