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Proceedings Paper

IR imaging of integrated circuit power transistors during operation
Author(s): Hsin Wang; Ralph B. Dinwiddie; H. Maleki; J. Oglesbee; C. Thougsouk
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Paper Abstract

An infrared microscope was used to study the surface temperature profiles of power transistor arrays in integrated circuits (IC) during operation. Each transistor array was set to conduct current for 20-50 microseconds. The integration time of the IR camera is adjusted to be between 2 and 10 microseconds. A thorough study of the camera's timing characteristics allows its precise synchronization to transient thermal events in the transistor arrays. Progressively adding incremental delay times to the synchronization pulses allows the complete characterization of the thermal transients as a function of time and location. The IR microscope timing characteristics were determined by imaging an incandescent lamp filament during pulsed operation. Examples of heat pulses in a lamp filament and power transistors are given.

Paper Details

Date Published: 15 March 2002
PDF: 7 pages
Proc. SPIE 4710, Thermosense XXIV, (15 March 2002); doi: 10.1117/12.459555
Show Author Affiliations
Hsin Wang, Oak Ridge National Lab. (United States)
Ralph B. Dinwiddie, Oak Ridge National Lab. (United States)
H. Maleki, Motorola Energy Systems Group (United States)
J. Oglesbee, Motorola Energy Systems Group (United States)
C. Thougsouk, Motorola Energy Systems Group (United States)

Published in SPIE Proceedings Vol. 4710:
Thermosense XXIV
Xavier P. Maldague; Andres E. Rozlosnik, Editor(s)

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