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Proceedings Paper

Model-based OPC methodology for 0.13 micron technology
Author(s): Vishnu G. Kamat; Kent G. Green; Sejal N. Chheda; Sven Muehle; Venkat Kolagunta; Bill Wilkinson; Cecilia E. Philbin
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Paper Abstract

As we move towards smaller dimensions and denser circuits, Model Based OPC has become a critical and indispensable tool to achieve feature fidelity for random logic and very small bitcell patterns. Model-Based OPC s used to overcome the effects due to the reticle manufacturing process and the photolithography process which are essentially low pass filters, with the objective of returning the intended drawn feature on wafer within acceptable error. In this paper we demonstrate its capabilities and flexibility with the development of a mixed Model-based/Rule based OPC approach that covers all categories of features for the active layer and the heuristics that justify this approach. We discuss along with experimental results the parameterized variations that are possible with Model Based OPC (MBOPC)and the optimization required as a result within the paradigm of a 248nm-lithography process for the 0.13-micron technology. Data and manufacturability issues are discussed that are an important consideration for a feasible MBOPC solution.

Paper Details

Date Published: 11 March 2002
PDF: 7 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458355
Show Author Affiliations
Vishnu G. Kamat, Motorola (United States)
Kent G. Green, Dupont Photomasks, Inc. (United States)
Sejal N. Chheda, Motorola (United States)
Sven Muehle, AMD Saxony Manufacturing GmbH (Germany)
Venkat Kolagunta, Motorola (United States)
Bill Wilkinson, Motorola (United States)
Cecilia E. Philbin, Motorola (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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