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Proceedings Paper

Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity
Author(s): Brian Martin; Robert Lloyd; Gareth Davies; Graham G. Arthur
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Paper Abstract

Contact hole definition in the resist image is investigated as a function of reticle fidelity. It is found that for typical levels of corner rounding on reticle features, whether manufactured using a laser or shaped e-beam mask writer, the printed resist image at wafer level is largely unaffected. The loss of definition, which is also seen in supporting simulations using perfectly formed reticle features, is defined by the resolution limit of the resolution limit of the optical system of the stepper rather than the quality of the photomask.

Paper Details

Date Published: 11 March 2002
PDF: 7 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458330
Show Author Affiliations
Brian Martin, Zarlink Semiconductor (United Kingdom)
Robert Lloyd, Photronics Ltd. (United Kingdom)
Gareth Davies, Photronics Ltd. (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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