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Proceedings Paper

Characterization of quartz-etched PSM masks for KrF lithography at the 100-nm node
Author(s): Peter D. Rhyins; Michael Fritze; David Y. Chan; Chris Carney; B. A. Blachowicz; Marco Vieira; Chris A. Mack
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Paper Abstract

The application of strong phase shift masks (PSM's) such as AAPSM and Chromeless using KrF 248-nm lithography is increasingly in demand for production of advanced devices at the 130 nm node and below. Implementation of dual exposure PSM technology is becoming widely accepted as a method to achieve sub-wavelength gate and contact layer resolution for microprocessors, DRAM and thin film heads. This requires a stable and repeatable phase-shift mask process that will perform for the wafer lithographer and is manufacturable using today's leading edge photomask fabrication methods. The focus of this study is the characterization of the photomask quartz etch process. The effect of the photomask's phase depth control and the quartz etch CD control will be examined. A comprehensive mask metrology study will be supplemented by lithography process latitude data, both simulation and experimentally based. The effect of fabricating the photomask quartz trenches using either resist or chrome defined etch masks will also be studied as well as the impact on lithography process latitude. A key goal of this study is the determination of a realistic specification for the quartz etch process required for leading- edge phase-shift photomasks.

Paper Details

Date Published: 11 March 2002
PDF: 10 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458325
Show Author Affiliations
Peter D. Rhyins, Photronics, Inc. (United States)
Michael Fritze, MIT Lincoln Lab. (United States)
David Y. Chan, Photronics, Inc. (United States)
Chris Carney, Arch Chemicals, Inc. (United States)
B. A. Blachowicz, Arch Chemicals, Inc. (United States)
Marco Vieira, Arch Chemicals, Inc. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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