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Proceedings Paper

Investigation of MoSi etch processes for embedded attenuating phase shift mask applications utilizing a next-generation ICP source
Author(s): Jason Plumhoff; Chris Constantine; C. Strawn; J. Shin
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Paper Abstract

As critical dimensions and exposure wavelengths approach the physical limitations of optical lithography, the use of newer techniques such as Embedded Attenuating Phase Shift Masks become necessary to extend the viability of DUV lithographic tools. One of the more common EAPSM materials is MoSi and its analogues. Current MoSi processes are challenged to meet future requirements of improved CD and phase uniformity, vertical profiles, and reduced Quartz substrate damage. To this end, a Next Generation ICP (Inductively Coupled Plasma) hardware configuration has been adopted with improved plasma uniformity and larger process window. In this article, a description and a performance characterization of this new ICP source and Chamber Fixturing Hardware is presented. Additionally, the MoSi plasma etch parameter space is explored utilizing Design of Experiments and preliminary process optimization is offered. Finally, process results including etch rate uniformity, CD uniformity, and sidewall profiles are discussed.

Paper Details

Date Published: 11 March 2002
PDF: 10 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458282
Show Author Affiliations
Jason Plumhoff, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)
C. Strawn, Unaxis USA, Inc. (United States)
J. Shin, Unaxis USA, Inc. (United States)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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