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Proceedings Paper

Peformances of triple-tone contact hole mask for optical lithography extensions
Author(s): Sang-Man Bae; Moon-Hee Lee; Sang-Chul Kim; Oscar Han
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Paper Abstract

In this paper we suggest a promising strategy for optical lithography extension. In general the process margin of a contact hole is poorer than line and space patterning for the same feature size. An asymmetrical contact hole mask designed by simulations was fabricated and printed. Several techniques in designing this photomask have been considered. We have some difficulties in patterning device with design rule of below sub-half micrometer. And we have to overcome not only wafer pattern fidelity but also mask manufacturing process such as OPC pattern generation and defect inspection and repair. Attenuated triple-tone phase shifting masks with higher transmission and patterned opaque regions give better imaging performances with improved process margins. Therefore we suggest that a triple-tone mask is a possible solution for the optical lithography extension technology.

Paper Details

Date Published: 11 March 2002
PDF: 12 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458267
Show Author Affiliations
Sang-Man Bae, Hynix Semiconductor Inc. (South Korea)
Moon-Hee Lee, Univ. of Suwon (South Korea)
Sang-Chul Kim, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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