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Proceedings Paper

Tool and process optimization for 100-nm maskmaking using a 50-kV variable shaped e-beam system
Author(s): Dirk Beyer; Dirk Loeffelmacher; Gernot Goedl; Peter Hudek; Bernd Schnabel; Thomas Elster
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Paper Abstract

An overview will be presented of high-resolution e-beam lithography equipment issues and processes used in the fabrication of photomasks/reticles needed for 100nm maskmaking. As reported and discussed repeatedly, the emerging advanced optical and next generation lithography for 100nm and beyond requires masks with a well controlled CD variation and high pattern placement accuracy. Our paper shows the possibility of 100nm patterning by using standard resist materials (e.g. ZEP 7000) or other advanced resist materials under optimized processing exposed with a 50keV shaped-beam vector-scan Leica SB350MW mask writer e-beam pattern generator. The presented results will show that this commercially available e-beam system together with built-in exposure optimization methods (proximity, local heating, fogging) meets the challenges of the 100nm device generation with extendibility to at least 70nm. Details of the exposure optimization possibilities, including a flexible determination method of proximity input parameters and resist-pattern transfer methods maintaining the required CD-control will be discussed also.

Paper Details

Date Published: 11 March 2002
PDF: 11 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.458252
Show Author Affiliations
Dirk Beyer, Leica Microsystems Lithography GmbH (Germany)
Dirk Loeffelmacher, Infineon Technologies AG (Germany)
Gernot Goedl, Infineon Technologies AG (Germany)
Peter Hudek, Leica Microsystems Lithography GmbH (Germany)
Bernd Schnabel, Leica Microsystems Lithography GmbH (Germany)
Thomas Elster, Leica Microsystems Lithography GmbH (Germany)

Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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