Share Email Print

Proceedings Paper

Charge-based deep-level transient spectroscopy of poly(p phenylenevinylene) light-emitting diodes
Author(s): Thien Phap Nguyen; Philippe Le Rendu; Olivier Gaudin; Richard B. Jackman
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Charge based deep level transient spectroscopy (Q-DLTS) has been used to investigate the defect states of poly (p phenylene vinylene)(PPV) light emitting diodes. Studies in the temperature range 250-315K show the presence of two carrier trapping centers in the polymer bulk: a majority carrier trap at 0.5 eV with a cross section of 10-16cm2 and a minority carrier trap at 0.4eV with a cross section of 10-19cm2. The results are compared and discussed with those previously reported in PPV based diodes using other techniques to determine the trap parameters in the polymer.

Paper Details

Date Published: 27 February 2002
PDF: 8 pages
Proc. SPIE 4464, Organic Light-Emitting Materials and Devices V, (27 February 2002); doi: 10.1117/12.457468
Show Author Affiliations
Thien Phap Nguyen, Univ. de Nantes (France)
Philippe Le Rendu, Univ. de Nantes (France)
Olivier Gaudin, Univ. College London (United Kingdom)
Richard B. Jackman, Univ. College London (United Kingdom)

Published in SPIE Proceedings Vol. 4464:
Organic Light-Emitting Materials and Devices V
Zakya H. Kafafi, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?