Charge based deep level transient spectroscopy (Q-DLTS) has been used to investigate the defect states of poly (p phenylene vinylene)(PPV) light emitting diodes. Studies in the temperature range 250-315K show the presence of two carrier trapping centers in the polymer bulk: a majority carrier trap at 0.5 eV with a cross section of 10^-16cm² and a minority carrier trap at 0.4eV with a cross section of 10^-19cm². The results are compared and discussed with those previously reported in PPV based diodes using other techniques to determine the trap parameters in the polymer.

Date Published: 27 February 2002
PDF: 8 pages
Proc. SPIE 4464, Organic Light-Emitting Materials and Devices V, (27 February 2002); doi: 10.1117/12.457468

Published in SPIE Proceedings Vol. 4464:
Organic Light-Emitting Materials and Devices V
Zakya H. Kafafi, Editor(s)