Spectrometer grade, room-temperature radiation detectors have been produced on Cd_0.90Zn_0.10Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd_0.90Zn_0.10Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution ⁵⁷Co and ²⁴¹Am radiation peaks are observed on all detectors expect the ones produced on Cd_0.90Zn_0.10Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.

Date Published: 10 January 2003
PDF: 7 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003);

Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Edwin M. Westbrook; Roger D. Durst; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst, Editor(s)