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Proceedings Paper

Pulsed laser deposition of nanocrystalline ZnSe:N thin films
Author(s): Ning Xu; Yuancheng Du; Fuming Li; Bong Hyung Boo
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Paper Abstract

We have grown nanocrystalline ZnSe thin films on GaAs(200) substrates by pulsed laser deposition (PLD) using KrF excimer laser. Atomic force microscopy (AFM) shows that the ZnSe thin films grown on GaAs(100) at 10 torr are flat and dense and composed of crystallites with particle size of less than 100nm. X-ray diffraction (XRD) results indicated that this ZnSe thin film are of (100) crystalline orientation and the average size of crystallites is about 25nm. X-ray photoelectron spectroscopy (XPS) indicates that the as-deposited thin films contain 7%[N] and below 3% [O], and nitrogen with N-Zn, N-N or N-O bondings are respectively 55% and 45% of total contained nitrogen. Photoluminescence measurements show an donor-to acceptor pair (DAP) recombination emission with a blue shift with respect to bulk ZnSe, which reveals the activation of [N] atoms as shallow acceptors in nanocrystalline ZnSe.

Paper Details

Date Published: 25 February 2002
PDF: 3 pages
Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456846
Show Author Affiliations
Ning Xu, Fudan Univ. (China)
Yuancheng Du, Fudan Univ. (China)
Fuming Li, Fudan Univ. (China)
Bong Hyung Boo, Korea Advanced Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4426:
Second International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Yong Feng Lu; Koji Sugioka; Jan J. Dubowski, Editor(s)

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