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Proceedings Paper

Physics of output power limitations in long-wavelength laser diodes
Author(s): Joachim Piprek; J. Kenton White; Anthony J. SpringThorpe
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Paper Abstract

We analyze the high-temperature continuous-wave performance of 1.3 micron AlGaInAs/InP laser diodes grown by digital alloy molecular beam epitaxy. Commercial laser software is utilized that self-consistently combines quantum well bandstructure and gain calculations with two-dimensional simulations of carrier transport, wave guiding, and heat flow. Excellent agreement between simulation and measurements is obtained by careful adjustment of material parameters in the model. Joule heating is shown to be the main heat source; quantum well recombination heat is almost compensated for by Thomson cooling. Auger recombination is the main carrier loss mechanism at lower injection current. Vertical electron escape into the p-doped InP cladding dominates at higher current and it causes the thermal power roll-off. Self-heating and optical gain reduction are the triggering mechanisms behind the leakage escalation.

Paper Details

Date Published: 4 December 2002
PDF: 11 pages
Proc. SPIE 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, (4 December 2002); doi: 10.1117/12.455546
Show Author Affiliations
Joachim Piprek, Univ. of California/Santa Barbara (United States)
J. Kenton White, Nortel Networks (Canada)
Anthony J. SpringThorpe, Nortel Networks (Canada)

Published in SPIE Proceedings Vol. 4871:
Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems
Richard P. Mirin; Carmen S. Menoni, Editor(s)

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