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Proceedings Paper

Electrochemical CdTe deposition for HgCdTe surface passivation
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Paper Abstract

CdTe films have been electrodeposited on HgCdTe from ethylene glycol based electrolyte containing 50 mM CdSO4, 10 mM K2TeO3 and 0.1 M HClO4. Deposition potential range with respect to a saturated calomel reference electrode was determined through cyclic voltammetry technique. RBS data showed that films deposited at potential range between -0.4 to -0.5 V have nearly stoichiometric Cd/Te atomic ratio. At the same time, highly oriented and smoother films were obtained at potential range were stoichiometric CdTe films were electrodeposited through nitrogen bubbling process. By adopting constant potential deposition technique could be obtained between electrodeposited CdTe and HgCdTe substrate showing high frequency capacitance-voltage (C-V) characteristics. Electrodeposited CdTe film can be used as a passivant for LWIR HgCdTe photodiodes.

Paper Details

Date Published: 5 December 2002
PDF: 8 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.453820
Show Author Affiliations
Jong-Hwa Choi, Korea Advanced Institute of Science and Technology (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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