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Proceedings Paper

Transient effects in InAs/GaAs quantum-dot detectors under low-temperature and low-background conditions
Author(s): Hillary E. Norton; David A. Cardimona; Christian P. Morath; Dang T. Le; Dan Hong Huang; Sanjay Krishna; Sunil Raghavan; P. Rotella
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Paper Abstract

In the presence of a time-dependent external source such as a bias electric field or an incident optical flux, electrons in quantum well and quantum dot devices experience non-adiabatic transport through the barrier layer between two adjacent quantum wells or quantum dots. This non-adiabatic transport process induces charge density fluctuations, resulting in several transient phenomena. When a time-dependent electric field is applied to the system, a dynamical breakdown (i.e., the dark current is dominated by a dielectric displacement current) of the quantum well or quantum dot photodetector is observed. If a chopped time-dependent optical flux is incident on either system, a dynamical drop in the photo-responsivity with increasing chopping frequency is also observed.

Paper Details

Date Published: 11 November 2002
PDF: 9 pages
Proc. SPIE 4823, Photonics for Space Environments VIII, (11 November 2002); doi: 10.1117/12.453513
Show Author Affiliations
Hillary E. Norton, Air Force Research Lab. (United States)
David A. Cardimona, Air Force Research Lab. (United States)
Christian P. Morath, Air Force Research Lab. (United States)
Dang T. Le, Air Force Research Lab. (United States)
Dan Hong Huang, Air Force Research Lab. (United States)
Sanjay Krishna, CHTM/Univ. of New Mexico (United States)
Sunil Raghavan, CHTM/Univ. of New Mexico (United States)
P. Rotella, CHTM/Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 4823:
Photonics for Space Environments VIII
Edward W. Taylor, Editor(s)

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