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Proceedings Paper

Growth of homoepitaxial GaN layers and GaN/AlGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy
Author(s): Shuichi Kubo; Tomoyuki Tanabe; Masafumi Konishi; Shiro Iwata; Tsunekazu Saimei; Satoshi Kurai; Tsunemasa Taguchi; Keiji Kainosho; Akihito Yokohata
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Paper Abstract

The growth of homoepitaxial GaN, AlGaN layers, and GaN/AlGaN multiple quantum wells (MQWs) on Ga- and N-faces of bulk GaN single crystal substrates prepared by pressure-controlled solution growth (PC-SG) has been performed by radio-frequency molecular-beam epitaxy (RF-MBE). It was determined that homoepitaxial GaN layers grown on both Ga- and N-faces had good crystallinity with narrow full-width at half maximum (FWHM) of 150 and 94 arcsec for the (0002) plane and 119 and 106 arcsec for the (10-12) plane in x-ray rocking curve measurements, respectively. Crack-free AlGaN epilayers with Al mole fraction up to 30% were obtained on both faces. AlGaN epilayers on Ga-faces with higher Al mole fraction than those on N-faces under the same Al flux condition were obtained. Furthermore, phase separation existed only in the AlGaN epilayers grown on N-faces. The 5 K photoluminescence spectra for the GaN/AlGaN MQW structures grown on Ga-faces at peak energy of 3.419 to 3.686 eV can be obtained by varying the well thickness from 18 to 2 ML.

Paper Details

Date Published: 26 November 2002
PDF: 8 pages
Proc. SPIE 4776, Solid State Lighting II, (26 November 2002); doi: 10.1117/12.452580
Show Author Affiliations
Shuichi Kubo, Yamaguchi Univ. (Japan)
Tomoyuki Tanabe, Yamaguchi Univ. (Japan)
Masafumi Konishi, Yamaguchi Univ. (Japan)
Shiro Iwata, Yamaguchi Univ. (Japan)
Tsunekazu Saimei, Yamaguchi Univ. (Japan)
Satoshi Kurai, Yamaguchi Univ. (Japan)
Tsunemasa Taguchi, Yamaguchi Univ. (Japan)
Keiji Kainosho, Japan Energy Corp. (Japan)
Akihito Yokohata, Japan Energy Corp. (Japan)

Published in SPIE Proceedings Vol. 4776:
Solid State Lighting II
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; Yoon-Soo Park, Editor(s)

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