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Proceedings Paper

Enhanced performances of InGaN-based light-emitting diode by a micro-roughened p-GaN surface using metal clusters
Author(s): Chul Huh; Kug-Seung Lee; Seong-Ju Park
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Paper Abstract

InGaN-based light-emitting diode with a micro-roughened top surface using the metal clusters as wet etch masks was investigated. The forward voltage, VF, at 20 mA for InGaN/GaN MQW LED chip with a mirco-roughened top surface was improved compared to that of the conventional InGaN/MQW LED chip. This result could be attributed to the improved metal contact on p-GaN due to an increased contact area between the metal and p-GaN layer. Furthermore, the light-output power for InGaN/GaN MQW LED with micro-roughened top p-GaN surface was increased compared to that for the conventional InGaN/GaN MQW LED chip. This indicate that the scattering of photons emitted in the MQW active layer was much enhanced at the micro-roughened top p-GaN surface of LED due to the angular randomization of photons inside the LED structureu, resulting in an increase in the probability of escaping from the LED structure.

Paper Details

Date Published: 26 November 2002
PDF: 8 pages
Proc. SPIE 4776, Solid State Lighting II, (26 November 2002); doi: 10.1117/12.452565
Show Author Affiliations
Chul Huh, Kwangju Institute of Science and Technology (South Korea)
Kug-Seung Lee, Kwangju Institute of Science and Technology (South Korea)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4776:
Solid State Lighting II
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; Yoon-Soo Park, Editor(s)

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