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Proceedings Paper

Low-energy ion implantation-induced control of InP-based heterostructure properties
Author(s): Vincent Aimez; Jacques Beauvais; Dominique Drouin; Jean Beerens; Denis Morris; Serge Jandl
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Paper Abstract

In this paper we show that low energy ion implantation of InP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a spatial control of the bandgap profile of the heterostructure, there is a list of requirements that have to be fulfilled. We have fabricated high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing for integration. We also adapted this intermixing process to specific heterostructures in order to obtain submicrometer bandgap tuning spatial control.

Paper Details

Date Published: 27 December 2001
PDF: 10 pages
Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); doi: 10.1117/12.452544
Show Author Affiliations
Vincent Aimez, Univ. de Sherbrooke (Canada)
Jacques Beauvais, Univ. de Sherbrooke (Canada)
Dominique Drouin, Univ. de Sherbrooke (Canada)
Jean Beerens, Univ. de Sherbrooke (Canada)
Denis Morris, Univ. de Sherbrooke (Canada)
Serge Jandl, Univ. de Sherbrooke (Canada)

Published in SPIE Proceedings Vol. 4468:
Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing
Emile J. Knystautas; Wiley P. Kirk; Valerie Browning, Editor(s)

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