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Proceedings Paper

Photoluminescence in crystalline-Si/Si02 quantum wells
Author(s): David J. Lockwood; Zheng-Hong Lu; D. Grozea
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Paper Abstract

Single nanometer-thick layers of crystalline silicon (c-Si) confined by amporphouse SiO2 have been prepared from silicon-on-insulator wafers. The photoluminescence from these ultra-thin quantum wells shows an increase in peak energy with decreasing c-Si layer thickness. Comparison with experimental results for the c-Si band gap and also with theory shows that the increase in photoluminescence peak energy is not as rapid as the measured or predicted energy gap. This difference is attributed to recombination of confined electron-hole pairs at the c-Si/SiO2 interface rather than within the quantum well.

Paper Details

Date Published: 5 November 2002
PDF: 5 pages
Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); doi: 10.1117/12.452159
Show Author Affiliations
David J. Lockwood, National Research Council Canada (Canada)
Zheng-Hong Lu, Univ. of Toronto (Canada)
D. Grozea, Univ. of Toronto (Canada)

Published in SPIE Proceedings Vol. 4808:
Optical Properties of Nanocrystals
Zeno Gaburro, Editor(s)

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