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Proceedings Paper

Infrared detectors on the basis of a-SiGe:H/c-Si heterostructures
Author(s): Boris G. Budaguan; Alexei A. Sherchenkov; Alexander V. Mazurov; Grigory L. Gorbulin
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Paper Abstract

The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. The investigation of spectral characteristics of a-SiGe:H/c-Si heterostructure in the wavelength range from 500 to 1100 nm showed that the short-wave absorption edge is determined by optical gap of a-SiGe:H alloy. The position of maximum of specific photosensitivity shifts from 830 to 940 nm with the increase of germanium concentration in the a-SiGe:H alloy. It was established that in a-SiGe:H/c-Si heterostructures the multitunnelling capture-emission mechanism prevails in low voltage range (less than 1.0 V). In this case the emission of holes to the valence band of a-SiGe:H from the defect states caused by Ge dangling bonds predominate. When applied voltage is more than 1.5 V, space charge limited current is observed. In this case the rise of the current is provided by the thermal emission of electrons from the defect states associated with Si dangling bonds in the upper half of a-SiGe:H.

Paper Details

Date Published: 5 December 2002
PDF: 8 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451912
Show Author Affiliations
Boris G. Budaguan, Moscow Institute of Electronic Technology (Russia)
Alexei A. Sherchenkov, Moscow Institute of Electronic Technology (Russia)
Alexander V. Mazurov, Moscow Institute of Electronic Technology (Russia)
Grigory L. Gorbulin, Moscow Institute of Electronic Technology (Russia)

Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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