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Proceedings Paper

New method for simulating charging effects on specimens in electron beam testing
Author(s): Naoto Kihara; Erika Kanematsu; Yoshinobu Kimura; Hiroshi Hayashi; Noriyuki Ishihara
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Paper Abstract

This paper describes a new numerical method capable of handling the scattering, the accumulation and the diffusion of electrons and holes in the specimen with 2D structure in a section, perpendicular to the top surface, made up of metals, semiconductors and insulators. The method comprises three parts; 1. Monte Carlo calculations for the scattering of electrons, 2. Numerical techniques for determining the accumulation of electrons and holes and the potentials, 3. Semiconductor Device Simulation techniques capable of modeling and analyzing the electron diffusion distribution. Preliminary testing on the performance is done, and the result shows that this method give essential information to understand charging characteristics such as a distribution of electrons and holes, and potentials in a stationary equilibrium. The details of the model are described. And the computation of the potentials in a specimen using this method and the conventional Monte Carlo calculation are compared. Examples for extended application are also shown.

Paper Details

Date Published: 21 December 2001
PDF: 12 pages
Proc. SPIE 4510, Charged Particle Detection, Diagnostics, and Imaging, (21 December 2001); doi: 10.1117/12.451279
Show Author Affiliations
Naoto Kihara, Nikon Corp. (Japan)
Erika Kanematsu, Nikon Corp. (Japan)
Yoshinobu Kimura, Nikon Corp. (Japan)
Hiroshi Hayashi, Fuji Research Institute Corp. (Japan)
Noriyuki Ishihara, Fuji Research Institute Corp. (Japan)

Published in SPIE Proceedings Vol. 4510:
Charged Particle Detection, Diagnostics, and Imaging
Eric Munro; John A. Rouse, Editor(s)

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