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Proceedings Paper

Correlating structure and photophysics in erbium-doped silicon nanocrystals
Author(s): Jeffrey L. Coffer; Robert A. Senter; Junmin Ji
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Paper Abstract

Silicon's position as the semiconductor of choice in micro/nanoelectronics hinges on its ability to shift to new design paradigms such as opto-electronics. Strategies to produce silicon-based light emitters remain limited, however, relying either on quantum confinement effects or optically-active dopants. We are actively studying the effects of incorporating optically-active Erbium centers into discrete crystalline Si nanocrystals. Such nanocrystals have been prepared via the pyrolysis of disilanein the presence of a suitable Er source. Two rather different types of doped materials have been synthesized to date: one involving a random distribution of erbium centers throughout the nanocrystal; the other forces erbium into a location preferentially-enriched near the surface. This work entails the structural characterization of such materials and their photophysical properties, including spectroscopic measurements under the conditions of high pressure.

Paper Details

Date Published: 15 November 2002
PDF: 9 pages
Proc. SPIE 4807, Physical Chemistry of Interfaces and Nanomaterials, (15 November 2002); doi: 10.1117/12.451243
Show Author Affiliations
Jeffrey L. Coffer, Texas Christian Univ. (United States)
Robert A. Senter, Texas Christian Univ. (United States)
Junmin Ji, Texas Christian Univ. (United States)

Published in SPIE Proceedings Vol. 4807:
Physical Chemistry of Interfaces and Nanomaterials
Jin Z. Zhang; Zhong L. Wang, Editor(s)

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