Share Email Print
cover

Proceedings Paper

Near-field optical mapping using cantilevered nanoscopic Schottky diode tips
Author(s): Bjoern Rosner; Toralf Bork; Vivek Agrawal; Pavel Neuzil; Daniel W. van der Weide
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report on the application as well as microfabrication process of batch-fabricated optical near-field sensors using cantilevered scanning force microscopy tips. The process includes implementation of a coaxial conductive geometry into a silicon sensor tip, along with electrical connections on the cantilever and chip body. The coaxial guide structure is used as electric lead to a sub-micron Schottky photodetector at the end of the tip, formed at the junction of the protruding silicon core and a recessed aluminum coating. The I-V curves of these sensors are consistent with numerical studies for such constricted geometries. Optical near-field data gathered by this sensor in topography-following mode is presented.

Paper Details

Date Published: 5 December 2001
PDF: 7 pages
Proc. SPIE 4456, Controlling and Using Light in Nanometric Domains, (5 December 2001); doi: 10.1117/12.449530
Show Author Affiliations
Bjoern Rosner, Univ. of Wisconsin/Madison and Univ. of Delaware (United States)
Toralf Bork, MEDOS SA, Johnson & Johnson Co. (Switzerland)
Vivek Agrawal, JDS Uniphase (United States)
Pavel Neuzil, Institute of Microelectronics (Singapore)
Daniel W. van der Weide, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 4456:
Controlling and Using Light in Nanometric Domains
Aaron Lewis; H. Kumar Wickramasinghe; Katharina H.B. Al-Shamery, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray