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Proceedings Paper

Excimer laser patterning of TiN film from metal sacrificial layers
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Paper Abstract

In this work, the relative performance of patterning TiN film from metal sacrificial layers using a 248nm excimer laser is presented. Patterning performance was determined by investigating etching behavior in terms of edge quality, film delamination and layer selectivity. Using <100> silicon as a substrate, TiN was arc deposited onto sputtered Cr and Cu sacrificial layers and silicon in a partially Filtered Arc Deposition (FAD) system at 150 degree(s)C. The TiN films were directly patterned into matrixes of fluence verses number of shots. The results show excellent patterning of TiN from Cr sacrificial layers in terms of pattern quality and film selectivity. The TiN ablated from a Cu sacrificial layer produced poor patterning and no layer selectivity. The experimental results are presented and discussed in relation to the explosion mechanism of ablation.

Paper Details

Date Published: 21 November 2001
PDF: 8 pages
Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.449005
Show Author Affiliations
Andrew John Dowling, Swinburne Univ. of Technology (Australia)
Muralihar K. Ghantasala, Swinburne Univ. of Technology (Australia)
Jason P. Hayes, Swinburne Univ. of Technology (Australia)
Erol C. Harvey, Swinburne Univ. of Technology (Australia)
Derry Doyle, Swinburne Univ. of Technology (Australia)

Published in SPIE Proceedings Vol. 4592:
Device and Process Technologies for MEMS and Microelectronics II
Jung-Chih Chiao; Lorenzo Faraone; H. Barry Harrison; Andrei M. Shkel, Editor(s)

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