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Proceedings Paper

Porous silicon as a sacrificial layer used in rf MEMS
Author(s): Peng Cong; Li-Tian Liu; Yong Ding
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Paper Abstract

This paper designs a process to prepare RF-MEMS using porous silicon (PS) as a sacrificial layer. The details of the process are discussed, such as the influences of H2SO4, H3PO4, and HF on the PS layer. KOH and TMAH solutions are used to remove the PS layer through small etching holes and to reduce the probability of the potential film damage, ethanol is used to dilute the KOH and TMAH solution. After the process, a suspended thin SiO2 film as large as 2x2mm2 is successfully achieved and the maximum lateral distance between the small etching holes is 540micrometers . Finally, two application examples are given.

Paper Details

Date Published: 21 November 2001
PDF: 4 pages
Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448993
Show Author Affiliations
Peng Cong, Tsinghua Univ. (China)
Li-Tian Liu, Tsinghua Univ. (China)
Yong Ding, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4592:
Device and Process Technologies for MEMS and Microelectronics II
Jung-Chih Chiao; Lorenzo Faraone; H. Barry Harrison; Andrei M. Shkel, Editor(s)

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