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Proceedings Paper

Deep-UV diagnostics using continuous tone photoresist
Author(s): Joseph P. Kirk; Michael S. Hibbs
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Paper Abstract

Lines with steep sidewalls formed in high contrast photoresist with low absorption tend to hide the character of the dose distribution that formed them. For highly absorbing resists, the depth removed during development is directly proportional to Log(dose) and therefore gives a continuous tone record of the exposure dose distribution. Many photoresists useful at 436 nm with low absorption coefficients become highly absorptive at 248 nm and no longer produce sharp profiles. This continuous record of the dose distribution is used to measure uniformity of dose within a field, stability of dose control from exposure to exposure, dose unit matching, and the recording of high resolution dose profiles. Application of continuous tone photoresist to deep-UV lithography tool diagnostics is presented along with a model describing performance.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44817
Show Author Affiliations
Joseph P. Kirk, IBM/General Technology Div. (United States)
Michael S. Hibbs, IBM/General Technology Div. (United States)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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