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Proceedings Paper

Nonadiabatic transient behavior of quantum well photodetectors
Author(s): David A. Cardimona; Danhong Huang; Christian P. Morath; Hillary E. Norton
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Paper Abstract

In the presence of a time-dependent external source such as a bias electric field, an incident optical flux, or the temperature, electrons in quantum well devices experience non-adiabatic transport through the barrier layer between two adjacent quantum wells. This non-adiabatic transport process induces charge density fluctuations within each quantum well, resulting in several seemingly unrelated transient phenomena. When a time-dependent electric field is applied to the system, a dynamical breakdown and a zero-bias residual dark current in the quantum-well photodetectors are predicted theoretically. If a chopped time-dependent optical flux is incident on the system, a dynamical drop in the photo-responsivity with increasing chopping frequency and an emission-current spike as the optical shutter is opened are predicted. Finally, as the device temperature is varied with time, a counter-clockwise thermal hysteresis is found theoretically in the dark current curve as a function of the changing temperature. Experimental confirmation of the above theoretical predictions is presented.

Paper Details

Date Published: 12 November 2001
PDF: 12 pages
Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448164
Show Author Affiliations
David A. Cardimona, Air Force Research Lab. (United States)
Danhong Huang, Air Force Research Lab. (United States)
Christian P. Morath, Air Force Research Lab. (United States)
Hillary E. Norton, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 4454:
Materials for Infrared Detectors
Randolph E. Longshore, Editor(s)

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