A patterning process with a linewidth resolution of 0.4 micrometers using i-line lithography and liftoff technique is presented for the fabrication of surface acoustic wave components. Using two resists systems, the process is developed and optimized with regards to exposure latitude and high resolution. Furthermore, a method is shown to determine linewidth variations in the lithography process by frequency measurements of surface acoustic wave resonators at a wafer prober. Reproducibility, versatility and resolution limit of the process is demonstrated by several realized devices.

Date Published: 1 July 1991
PDF: 6 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44811

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)