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Proceedings Paper

Evaluation of a photoresist process for 0.75-micron g-line lithography
Author(s): Jack S. Kasahara; Mircea V. Dusa; Thiloma Perera
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Paper Abstract

A consistent 0.75 micron lithography process was developed for implementation in an existing technology environment. Prolith/2 modeling parameters were experimentally measured and photoresist simulations were performed to gain confidence in the modeling program. Experimental results fulfilled a proposed set of production process requirements, and a consistent three-quarter-micron, g-line process can be implemented in the manufacturing environment.

Paper Details

Date Published: 1 July 1991
PDF: 12 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44809
Show Author Affiliations
Jack S. Kasahara, Hoechst Celanese Corp. (United States)
Mircea V. Dusa, SEEQ Technology, Inc. (United States)
Thiloma Perera, Hoechst Celanese Corp. (United States)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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