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Proceedings Paper

Design methodology for dark-field phase-shifted masks
Author(s): Kenny K.H. Toh; Giang T. Dao; Henry T. Gaw; Andrew R. Neureuther; Larry R. Fredrickson
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Paper Abstract

Simulation has been used to systematically investigate the effects of phase-shifters on dark- field patterns (openings in a dark-field mask), and to determine the phase-shifter configurations that are most effective for different mask patterns. This study has resulted in a design methodology based on the distance between the centers of clear features and the surrounding phase-shifters. A key verification is that isolated phase-shifted patterns print best when the distance from the center of the phase-shifter to the center of the feature is approximately 0.7 (lambda) /NA. At this optimal spacing, the peak image intensity, image slope and resist wall-angle of the printed pattern is maximized. Optimally-aligned phase- shifters will also have the best focus-exposure behavior of all the different dark-field phase- shifter configurations. However, dark-field phase-shifters will only provide a resolution increase on the order of 0.05 0.10 (lambda) /NA. Different dark-field mask configurations will print with different amounts of bias; the amount of print bias is dependent on the width of the phase-shifters and the distance between the phase-shifters and the feature. Response curves of resist opening as a function of feature size and phase-shifter/feature separation can be used to keep track of the amount of bias required in a given phase-shifter configuration.

Paper Details

Date Published: 1 July 1991
PDF: 12 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44799
Show Author Affiliations
Kenny K.H. Toh, Intel Corp. (United States)
Giang T. Dao, Intel Corp. (United States)
Henry T. Gaw, Intel Corp. (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Larry R. Fredrickson, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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