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Proceedings Paper

Study of the relationship between exposure margin and photolithographic process latitude and mask linearity
Author(s): Steven G. Hansen; Giang T. Dao; Henry T. Gaw; Qi-De Qian; Peggy M. Spragg; Rodney J. Hurditch
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Paper Abstract

The utility of exposure margin, defined as the ratio between the 1:1 mask reproduction exposure energy and the open frame threshold exposure energy (E0), as an indicator of process latitude, is probed using extensive computer simulations and some experimental photolithography. The correlation is shown to be excellent for latitudes which depend primarily on critical dimension such as mask linearity and exposure latitude: a high exposure margin implies a high process latitude. Qualitative physical arguments are offered to explain this. For sidewall angle constrained latitudes such as defocus, the correlation is also good if comparing photoresists with similar optical absorption characteristics. These results are potentially significant because exposure margin is easily measured and therefore provides an efficient means for process optimization (at zero mask bias). As part of this work a simulation procedure which reduces the focus: exposure: mask dimension latitude to a single process latitude volume was developed and is described.

Paper Details

Date Published: 1 July 1991
PDF: 15 pages
Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); doi: 10.1117/12.44784
Show Author Affiliations
Steven G. Hansen, Olin Research Ctr. (United States)
Giang T. Dao, Intel Corp. (United States)
Henry T. Gaw, Intel Corp. (United States)
Qi-De Qian, Intel Corp. (United States)
Peggy M. Spragg, OCG Microelectronic Materials, Inc. (United States)
Rodney J. Hurditch, OCG Microelectronic Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 1463:
Optical/Laser Microlithography IV
Victor Pol, Editor(s)

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