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Proceedings Paper

GaN-based acousto-optic devices for blue optoelectronics
Author(s): Daumantas Ciplys; Remis Gaska; Michael S. Shur; Romualdas Rimeika; Jinwei Yang; Mohamed Asif Khan
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Paper Abstract

Wide energy gap and strong piezoelectric effects in A1GaN-based materials are very attractive for the development of visible-ultraviolet spectral range optoelectronic devices, such as optical waveguides and light modulators. In this paper, we report on the experimental studies ofthe acousto-optical diffraction in GaN-based layered structures grown by low-pressure MOCVD over sapphire substrates. We present the extracted values of the acoustooptic figures of merit and effective photoelastic constants for red (633 nm) and blue (442 nm) wavelengths. Our results demonstrate the potential of GaN-based structures for the development ofblue-ultraviolet acousto-optical devices.

Paper Details

Date Published: 6 November 2001
PDF: 8 pages
Proc. SPIE 4453, Materials and Devices for Photonic Circuits II, (6 November 2001); doi: 10.1117/12.447655
Show Author Affiliations
Daumantas Ciplys, Rensselaer Polytechnic Institute and Sensor Electronic Technology, Inc. (United States)
Remis Gaska, Sensor Electronic Technology, Inc. (United States)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)
Romualdas Rimeika, Rensselaer Polytechnic Institute (United States)
Jinwei Yang, Univ. of South Carolina (United States)
Mohamed Asif Khan, Univ. of South Carolina (United States)

Published in SPIE Proceedings Vol. 4453:
Materials and Devices for Photonic Circuits II
Mario Nicola Armenise, Editor(s)

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