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Proceedings Paper

Structural analysis of a new phase change optical memory material: Ag-Sb-Te
Author(s): Yagya Deva Sharma; Promod K. Bhatnagar
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Paper Abstract

Phase change optical recording disks using have been found to demonstrate long stability of the amorphous recording marks. Structural analysis of the material were studied by X Ray Diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) respectively. The films were studied for both the cases: before and after annealing and it was concluded that the alloy (Ag-Sb-Te) could be used as a phase change optical memory material.

Paper Details

Date Published: 16 October 2001
PDF: 9 pages
Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445734
Show Author Affiliations
Yagya Deva Sharma, Univ. of Delhi/South Campus (India)
Promod K. Bhatnagar, Univ. of Delhi/South Campus (India)

Published in SPIE Proceedings Vol. 4602:
Semiconductor Optoelectronic Device Manufacturing and Applications
David Chen; David Chen; Guo-Yu Wang; Ray T. Chen; Guo-Yu Wang; Chang-Chang Zhu, Editor(s)

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