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Proceedings Paper

Heteroepitaxial 96 x 128 lead chalcogenide on silicon infrared focal plane array for thermal imaging
Author(s): Karim Alchalabi; Dmitri S. Zimin; Hans Zogg; Werner Buttler
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Paper Abstract

Narrow gap IV-VI (lead chalcogenides like PbSnSe and PbTe) layers grown epitaxially on Si(111)-substrates by molecular beam epitaxy exhibit high quality despite the large lattice and thermal expansion mismatch. Line arrays in IV-VI on Si layers have so far been realized and described. We present the first realization of a 2-d narrow gap IR-FPA on a Si-substrate containing the active addressing electronics: A 96 X 128 array with 75 μm pitch for row-by-row electronic scanning and parallel read-out of the line addressed. Each pixel contains a bare Si-area onto which epitaxial growth occurs, and an access transistor. A MWIR PbTe layer is grown by MBE onto complete Si-read-out substrates at temperatures below 450°C (because of the Al-metallization). Photovoltaic sensors are then delineated in the layers. Each pixel is connected to the Si read-out by sputtered Al-stripes. Yield in completely fabricated arrays was up to above 97%, with quantum efficiencies around 60% and differential resistances at zero bias of several 100 kOhms.

Paper Details

Date Published: 10 October 2001
PDF: 7 pages
Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); doi: 10.1117/12.445303
Show Author Affiliations
Karim Alchalabi, Swiss Federal Institute of Technology Zurich (Switzerland)
Dmitri S. Zimin, Swiss Federal Institute of Technology Zurich (Switzerland)
Hans Zogg, Swiss Federal Institute of Technology Zurich (Switzerland)
Werner Buttler, Ingenieurbuero (Germany)

Published in SPIE Proceedings Vol. 4369:
Infrared Technology and Applications XXVII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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