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Proceedings Paper

Low-noise high-yield octave-band feedback amplifiers to 20 GHz
Author(s): Katcha Minot; Mike Cochrane; Brad Nelson; William L. Jones; Dwight C. Streit; Po-Hsin P. Liu
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Paper Abstract

Details of the design, fabrication, and measured data for three InGaAs HEMT broadband feedback amplifiers are presented. Each amplifier was designed for octave bandwidth operation, but exhibits good performance over slightly larger bandwidths: 2-7 GHz, 5-11 GHz, and 9-19 GHz. The circuits feature compact size, low noise, and high yield. Each circuit measures approximately 2.5 mm x 1.5 mm. Maximum noise figure measured 2.1 dB with 11.8 dB minimum gain for the low-band amplifier, 1.9 dB with 9.9 dB gain for the mid-band amplifier, and approximately 2.5 dB with 8.3 dB gain for the high-band amplifier. RF yields of greater than 70 percent have been achieved.

Paper Details

Date Published: 1 July 1991
PDF: 5 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44509
Show Author Affiliations
Katcha Minot, TRW, Inc. (United States)
Mike Cochrane, TRW, Inc. (United States)
Brad Nelson, TRW, Inc. (United States)
William L. Jones, TRW, Inc. (United States)
Dwight C. Streit, TRW, Inc. (United States)
Po-Hsin P. Liu, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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