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Proceedings Paper

Modeling of optical mirror and electromechanical behavior
Author(s): Fang Wang; Chao Lu; Zishun Liu; Ai Qun Liu; Xu Ming Zhang
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Paper Abstract

This paper presents finite element (FE) simulation and theoretical analysis of novel MEMS fiber-optical switches actuated by electrostatic attraction. FE simulation for the switches under static and dynamic loading are first carried out to reveal the mechanical characteristics of the minimum or critical switching voltages, the natural frequencies, mode shapes and response under different levels of electrostatic attraction load. To validate the FE simulation results, a theoretical (or analytical) model is then developed for one specific switch, i.e., Plate_40_104. Good agreement is found between the FE simulation and the analytical results. From both FE simulation and theoretical analysis, the critical switching voltage for Plate_40_104 is derived to be 238 V for the switching angel of 12 degree(s). The critical switching on and off times are 431 microsecond(s) and 67 microsecond(s) , respectively. The present study not only develops good FE and analytical models, but also demonstrates step by step a method to simplify a real optical switch structure with reference to the FE simulation results for analytical purpose. With the FE and analytical models, it is easy to obtain any information about the mechanical behaviors of the optical switches, which are helpful in yielding optimized design.

Paper Details

Date Published: 18 October 2001
PDF: 11 pages
Proc. SPIE 4582, Optical Switching and Optical Interconnection, (18 October 2001); doi: 10.1117/12.445082
Show Author Affiliations
Fang Wang, Institute of High Performance Computing (Singapore)
Chao Lu, Institute of High Performance Computing (Singapore)
Zishun Liu, Institute of High Performance Computing (Singapore)
Ai Qun Liu, Nanyang Technological Univ. (Singapore)
Xu Ming Zhang, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4582:
Optical Switching and Optical Interconnection
Lih-Yuan Lin; Shulian Zhang, Editor(s)

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