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Proceedings Paper

High-power 980-nm semiconductor lasers by MBE
Author(s): Michael Mikulla; Marc T. Kelemen; Martin Walther; Rudolf Kiefer; R. Moritz; Guenter Weimann
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Paper Abstract

Within the last few years, high power laser diodes with remarkable improvements concerning output power, efficiency, and reliability have been investigated in the wavelength range between 780 nm and 1064 nm. A lot of the work has been focused on 980 nm, the pump wavelength of Erbium Doped Fiber Amplifiers (EDFAs). Pumping of EDFAs requires highest performance diode lasers due to extreme demands in reliability and beam quality. Up to now, the only type of diode laser used in this application is a single-stripe or ridge-laser which emits in a diffraction-limited optical mode and can therefore be coupled into a single-mode fiber with high efficiency. The small stripe-width limits the reliable output power of these devices to about 300 mW resulting in a fiber coupled output power of less than 250 mW. In the following we report on high-power 980 nm diode lasers comprising ridge and tapered sections for near diffraction limited output power in the watt regime. The devices are based on MBE grown layer structures in the AlInGaAs material system. They allow for more than 500 mW of optical power coupled into a single mode fiber. First reliability tests show extrapolated lifetimes of more than 7.500 h at an output power of 1.8 W.

Paper Details

Date Published: 19 October 2001
PDF: 8 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444955
Show Author Affiliations
Michael Mikulla, Fraunhofer-Institut fuer Angewandte Festkoerperphy (Germany)
Marc T. Kelemen, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
Rudolf Kiefer, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
R. Moritz, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Guenter Weimann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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